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By L. Ley, M. Cardona

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The periodicity of the distortion (CDW) is indeed a = ~ / k v. As the critical temperature Td for the formation of the C D W is a p p r o a c h e d from above, the zone edge p h o n o n which corresponds to the cell distortion becomes soft and its frequency vanishes at Td. F o r two-dimensional solids one expects transitions to C D W states whenever there are flat or nearly flat portions of the two-dimensional Fermi surface. ) in the transition metal dichalcogenides. We show as an example in Fig.

As already mentioned, the lowest conduction band of G a A s (Fig. 5) is at F, a fact common to all II VI compounds and most lll-V's. ,GaP, AlSb). 8]. They have so far, however, played no role in the studies of photoemission for the compounds under consideration. These spin-orbit splittings are basically of atomic nature. That at F~ 5(F8- FT) is an average of the splittings of the p valence electrons of the two constituent atoms weighted somewhat more heavily towards the splitting of the anion. The splitting at L 3 is roughly two-thirds of the splitting at F~5 while the splitting at X S depends on the difference of the splittings of the component atoms (it is zero in germanium).

G r o u p II contains bonding orbitals between the Se and the Ga, while group I is composed of G a - G a sp: bonds and of p: orbitals of the chalcogen. y,pz 1o l Ses ÷ 17 Ill Fig. 12. 64] Another large group of tetrahedral semiconductors does not have a well defined crystal structure but appears in amorphous form without long-range order. Most of the group IV and III-V semiconductors just discussed can be prepared in amorphous form with only tetrahedral short-range order. We defer the discussion of their electronic structure to Sect.

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