Download Lateral Alignment of Epitaxial Quantum Dots by Oliver G. Schmidt PDF

By Oliver G. Schmidt

Actual positioning of self-organized nanostructures on a substrate floor should be considered as the Achilles' heel of nanotechnology. This conception additionally applies to self-assembled semiconductor quantum dots. This booklet describes the entire diversity of attainable techniques to laterally align self-assembled quantum dots on a substrate floor, ranging from natural self-ordering mechanisms and culminating with compelled alignment by means of lithographic positioning. The textual content addresses either brief- and long-range ordering phenomena and paves the best way for the longer term excessive integration of unmarried quantum dot units on a unmarried chip. Contributions by way of the best-known specialists during this box make sure that all correct quantum-dot heterostructures are elucidated from different views.

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64, 1526 (1994) 18. V. N. V. D. N. N. A. M. S. M. Sotomayor Torres, Phys. Rev. B 51, 14346 (1995) 19. N. L. V. V. L. S. I. Alferov, D. M. Sotomayor Torres, Appl. Phys. Lett. 69, 1343 (1996); ibid. 20. F. Andreev, Pis’ma Zh. Eksp. Teor. Fiz. 32, 654 (1980) [JETP Lett. 32, 640 (1980)] 70, 2766 (1997) 21. I. Marchenko, Zh. Eksp. Teor. Fiz. 81, 1141 (1981) [Sov. Phys. JETP 54, 605 (1981)] 22. -O. Ng, D. Vanderbilt, Phys. Rev. B 52, 2177 (1995) 23. F. Family, P. Meakin, Phys. Rev. Lett. 61, 428 (1988) 24.

I. Alferov, D. M. Sotomayor Torres, Appl. Phys. Lett. 69, 1343 (1996); ibid. 20. F. Andreev, Pis’ma Zh. Eksp. Teor. Fiz. 32, 654 (1980) [JETP Lett. 32, 640 (1980)] 70, 2766 (1997) 21. I. Marchenko, Zh. Eksp. Teor. Fiz. 81, 1141 (1981) [Sov. Phys. JETP 54, 605 (1981)] 22. -O. Ng, D. Vanderbilt, Phys. Rev. B 52, 2177 (1995) 23. F. Family, P. Meakin, Phys. Rev. Lett. 61, 428 (1988) 24. C. W. Evans, Phys. Rev. B 46, 12675 (1992) 25. C. Ratsch, A. Zangwill, P. D. Vvedensky, Phys. Rev. Lett. 72, 3194 (1994) 26.

D Multisheet array of 3D coherently strained islands – – – – – The volume density of QDs is rather low. Thus, for laser applications, the overlap of the active medium with the optical mode is rather small, which deteriorates major device characteristics. 55 μm. 24 μm contains, along with coherent islands, a significant density of dislocated islands which makes the structure not suitable for laser applications. Thus, the wavelength of lasing is limited to even smaller values. Localization of electrons and holes by 3D InAs/GaAs QDs is not sufficiently strong to maintain the performance of QD structures up to room temperatures.

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