By P. R. Hanley (auth.), Dr. Heiner Ryssel, Dr. Hans Glawischnig (eds.)
Read or Download Ion Implantation: Equipment and Techniques: Proceedings of the Fourth International Conference Berchtesgaden, Fed. Rep. of Germany, September 13–17, 1982 PDF
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Extra resources for Ion Implantation: Equipment and Techniques: Proceedings of the Fourth International Conference Berchtesgaden, Fed. Rep. of Germany, September 13–17, 1982
The decision was made to base the new machine on components used in the Lintott Implanter, since many of these components were already available within the laboratory, including a Freeman type ion source. The Freeman *permanent address: Central Research Institute for Physics, Budapest, Hungary 37 source, with its many variants gives great flexibility in generating high currents of all ion species of interest. Also the yield of multi-charges species is sufficiently high to enable useful beam currents to be generated and this effectively i~crea~es t~e en~rgy range of the machine.
Figure 16. Batch process and serial process systems have been separated to better illustrate the trend for each of these configurations. The data points represent the achievable unscanned arsenic beam currents shown for the year in which the equipment was introduced. Surprisingly good regressi on 1i nes can be fitted to these few data poi nts and the goodness of fit would probably lead to erroneous conclusions about what is possible in the future. Consequently the regression line is shown as the lower limit of the shaded areas, as the long awaited recovery in the semiconductor industry will undoubtedly spark aggressive developments of the technology by the equipment manufacturers.
Phys. 20, supp1. 20-2, 39(1981) 8. : Rev. Sei. Instrum. D. E. Fromson, R. L. Pack Westinghouse Elee. , Pittsburgh, PA 15235, USA This paper describe~ the design of, and initial operating experience with, an ion implantation system at the Research and Development Center of the Westinghouse Electric Corporation. The ion beam energy can be varied from 30 KeV to 185 KeV at currents up to 10 ma. The beam optics can vary the spot size at the target from <1 cm 2 to 100 cm 2 . The beam can be direct or analyzed.