By Kevin F. Brennan
This quantity deals a high-quality beginning for knowing an important units utilized in the most popular components of digital engineering at the present time, from semiconductor basics to cutting-edge semiconductor units within the telecommunications and computing industries. Kevin Brennan describes destiny methods to computing and RF energy amplifiers, and explains how rising traits and method calls for of computing and telecommunications structures impression the alternative, layout, and operation of semiconductor units. furthermore, he covers MODFETs and MOSFETs, brief channel results, and the demanding situations confronted by way of carrying on with miniaturization. His publication is either an outstanding senior/graduate textual content and a worthy reference for training engineers and researchers.
Read or Download Introduction to Semiconductor Devices: For Computing and Telecommunications Applications PDF
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Extra info for Introduction to Semiconductor Devices: For Computing and Telecommunications Applications
In a semiconductor doped with donors the equilibrium electron concentration becomes larger than the equilibrium hole concentration and the semiconductor is said to be n-type. Similarly, if the semiconductor is doped with acceptors, the equilibrium hole concentration is greater than the equilibrium electron concentration and the semiconductor is said to be p-type. An example donor atom in silicon is phosphorus. Phosphorus is a Column VA element while silicon is a Column IVA element. Therefore, phosphorus has an outer valence of ﬁve while silicon has an outer valence of four.
We make the following simplifying assumptions: (i) the system is one-dimensional; (ii) there is no applied ﬁeld present so that the drift term vanishes; (iii) the equilibrium concentration is constant and uniform for both electrons and holes; (iv) there is low level injection; (v) the time rate of change of the carrier concentrations due to other generation/ recombination mechanisms is equal to GL . 53) where we have neglected the drift current. 59) for holes. 3. 2 The continuity equation in steady-state for p-type material Solve the continuity equation in steady-state for a p-type material.
46) where τ n and τ p are the electron and hole recombination lifetimes respectively. 0 eV. (a) Find the total amount of power absorbed. 59 mW. (b) Assume perfect quantum efﬁciency and determine the number of electron–hole pairs per second produced. First calculate the number of photons per second absorbed. 6 × 10−19 J/eV)(2 eV/photon) To ﬁnd the number of electron–hole pairs produced we need to use the quantum efﬁciency. The quantum efﬁciency is deﬁned as the number of electron–hole pairs produced per photon.