By Simon Deleonibus
This ebook offers a cutting-edge assessment by means of internationally-recognized researchers of the leap forward units architectures required for destiny clever built-in structures first e-book within the Pan Stanford sequence on clever Nanosystems. either complex Silicon established CMOS applied sciences and New Paths to Augmented Silicon CMOS applied sciences, showing within the first part and the second one part respectively, function extra Moore, greater than Moore and past kind of units of curiosity to construction Heterogeneous built-in structures. the 1st part highlights complex Silicon dependent CMOS applied sciences with totally Depleted Planar, Trigate and Nanowire MOSFETs, Schottky resource and drains architectures and attainable applicants channel fabrics to be co built-in with Silicon On Insulator similar to Ge, III-V and Carbon or isolate silicon channel with Diamond. New gadget and useful architectures are to boot reviewed through Tunneling box impression Transistors and 3D Monolithic Integration which the choice fabrics might be able to use sooner or later. the way in which lets increase Silicon applied sciences is illustrated by way of the co-integration of latest varieties of units reminiscent of Molecular and Resistive, Spintronics dependent stories, clever Sensors utilizing Nano scale beneficial properties co-integrated with silicon CMOS or above it. 3D integration and Wafer point Packaging are bobbing up in addition to close up new features and items. The demanding situations to be addressed and attainable suggestions are defined during this publication.
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Extra info for Intelligent Integrated Systems: Devices, Technologies, and Architectures
Singlelayer MoS2 transistors. Nat. Nanotechnol. 2011; 6(3):147–150. 22. L. A. Klein. Sensor and Data Fusion: A Tool for Information Assessment and Decision Making. SPIE Press. 2004; 51. 23. E. Mile, G. Jourdan, I. Bargatin, C. Marcoux, S. Labarthe, C. Kharrat, P. Andreucci, S. Hentz E. Colinet, and L. Duraﬀourg. In-plane nanoelectromechanical resonators based on silicon nanowire piezoresistive detection. Nanotechnology. 2010; 21:165504. fr This chapter provides an overview of the main advantages provided by planar undoped channel fully depleted SOI devices.
Ultra-dense contacts and metal lines for the interconnections remains a problem in all sub-lithographic dense device approaches, even if some techniques like multiple patterning, look promising. 14 Cross-sectional TEM pictures of 3D SONOS (a) 4-levels and (b) 13-level NW. Reprinted from  with permission from Elsevier. and columns, the contact lithography is not as dense as for individual devices. In that case, contacts can indeed be placed in a staggered conﬁguration in 2D or in 3D [56, 57], or their dimension may be relaxed thanks to the 3D density gain .
2010: 58–61. 11. A. Asenov. Simulation of statistical variability in nano MOSFETs. IEEE Symposium on VLSI Technology. 2007: 86–87. 12. A. Cathignol, B. Cheng, D. Chanemougame, et al. Quantitative evaluation of statistical variability sources in a 45-nm technological node LP nMOSFET. IEEE Electron Device Lett. 2008; 29(6): 609–611. 13. M. Kanno, A. Shibuya, M. Matsumura, et al. Empirical characteristics and extraction of overall variations for 65-nm MOSFETs and beyond. IEEE Symposium on VLSI Technology.